ASML

High-NA EUV (TWINSCAN EXE)

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The 0.55 NA anamorphic-optics scanners for sub-2nm chipmaking - at ~$380M each, the most expensive production tools ever built. The production-grade EXE:5200B installed at Intel in Q4 2025 for the 14A node; on July 15, 2026 select layers of Intel's Panther Lake (18A) chips became the first High-NA-patterned product to reach high-volume manufacturing. On September 8, 2026 Intel Foundry and ASML said more than one million wafers had been processed on High-NA tools across certification, R&D and those Panther Lake layers. As of Semicon Taiwan 2026, 10 EXE systems were running at four customers with three more shipping, July fleet availability was 84% (90% Q4 target), and the qualified EXE:5200B had reached 135 wafers per hour in acceptance testing. TSMC said on September 8, 2026 that it intends to use High-NA in high-volume manufacturing from 2030.

Latest update Sep 14, 2026

High-NA EUV (TWINSCAN EXE)

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Current status

High-volume validation achieved via Intel Panther Lake (18A, Jul 2026); Intel Foundry and ASML reported more than one million High-NA wafers processed as of Sept 8, 2026 (certification, R&D and select production layers combined); Intel 14A risk production in 2027 is the next insertion; 10 systems live at 4 customers as of Semicon Taiwan 2026 with a 90% Q4 availability target; TSMC committed on September 8, 2026 to High-NA high-volume manufacturing from 2030, with a joint 12-inch photomask initiative (pilot 2031, production 2033); Reuters reported September 14 that Samsung and SK Hynix both set 2028 High-NA DRAM production, while Micron ordered tools without a date

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Specifications3

Throughput (EXE:5200B)
135 wafers/hour in acceptance testing

(AB mode); roadmap 160 WPH on EXE:5200C, 175 on EXE:5200D, 180 on EXE:5400E, >250 on planned EXE:5600

System price
~$380M ($350-400M installed)
Fleet

10 systems running at 4 customers, plus 3 shipping or installing (Semicon Taiwan 2026)

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Upcoming milestones2

Announced next steps from ASML that mention High-NA EUV (TWINSCAN EXE).

  1. 2027

    First High-NA production insertion: Intel 14A risk production

    Intel's 14A node is the first process natively built around High-NA EUV, with risk production slated for 2027 and high-volume manufacturing in 2027-2028. Intel already dual-qualified select Panther Lake (18A) layers on High-NA in July 2026 as an interim validation step; ASML plans 80-85 low-NA EUV systems for 2027 alongside the High-NA ramp. Re-verified September 2026: no change to the 14A timing, and Semicon Taiwan comments focused on EXE availability rather than a new Intel insertion date.

  2. 2028-2030

    Convert TSMC, Samsung and SK hynix High-NA commitments into high-volume layers

    TSMC said on September 8, 2026 that it intends to use High-NA EUV in high-volume manufacturing for advanced nodes from 2030, starting on 6-inch masks, and joined ASML in an industry initiative for 12-inch High-NA photomasks (pilot line 2031, production-ready 2033). The same day Samsung said it will put High-NA into DRAM high-volume manufacturing by 2028, an industry first, and joined the 12-inch mask initiative; Reuters reported on September 14 that SK hynix set the same 2028 DRAM date, while Micron has ordered tools without a production date. Intel Foundry and ASML said more than one million wafers have been processed on High-NA tools across certification, R&D and selected Panther Lake (18A) layers. The near-term demand test is whether those dated commitments turn into high-volume layers outside Intel's already-shipping Panther Lake High-NA use and the still-pending Intel 14A insertion. Semicon Taiwan 2026 said 10 EXE systems were already running at four customers, with three more shipping.

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In the news2

  1. Samsung and SK Hynix set 2028 High-NA DRAM dates

    Reuters reported September 14 that Samsung and SK Hynix have both set 2028 dates to begin High-NA EUV DRAM production, while Micron has ordered tools without a production date. TSMC remains committed to High-NA high-volume manufacturing from 2030, and Intel has processed more than one million High-NA wafers across certification, R&D and select Panther Lake layers. ASML CEO Christophe Fouquet said the AI boom is not over and that memory makers are more aggressive on High-NA as low-NA EUV tools are all but sold out through 2027.

    Reuters

  2. ASML targets High-NA EUV production availability by year-end

    At Semicon Taiwan 2026, ASML High-NA product chief Greet Storms said the company expects 0.55-NA EXE systems to reach the availability customers need for high-volume manufacturing by the end of 2026, targeting 90% fleet availability in the fourth quarter after 84% in July. Ten High-NA systems are running at four customers, with three more shipping or installing, and EXE tools had accumulated more than 1.35 million wafer exposures by mid-July. The qualified EXE:5200B reached 135 wafers per hour in acceptance testing, with a longer-term availability goal of 93%.

    Bits & Chips TrendForce

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