BYD Semiconductor (IGBT & SiC Power Chips)

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BYD
BYD

Overview

In-house automotive power-semiconductor business supplying the IGBT modules and silicon-carbide (SiC) MOSFETs used in BYD's electric-drive inverters and onboard chargers, giving BYD's EVs a vertically integrated power-electronics stack that most rivals still buy from third parties (Infineon, STMicro, etc.). Also supplies chips externally to other automakers.

China's leading automotive IGBT supplier; revenue has grown more than 5x since 2021 as BYD ramps wafer-fab capacity toward roughly 60,000 wafers/month by 2026 across new 200mm lines and a strategic 300mm facility in Chengdu, while pushing further into SiC devices to close the technology gap with players like Infineon. On September 2, 2026 it began mass-producing a new 4D millimeter-wave radar chip built around the Xuanji A3 compute hub for L2-L4 driving, extending its in-house stack from power electronics into driving-sensor silicon.

Key Specs

Wafer fab capacity (2026 target)
~60,000 wafers/month (up from ~5,000 wpm), incl. new 300mm Chengdu fab
4D Radar Chip (Sept 2026)
28nm automotive-grade, 8 TX/8 RX channels, 400m+ detection range, 0.8° angular resolution, built on Xuanji A3 compute hub for L2-L4 driving