Wednesday, September 9, 2026
TSMC commits to High NA EUV from 2030
TSMC and ASML said on September 8, 2026 that TSMC intends to use High NA EUV in high-volume manufacturing for advanced nodes starting in 2030, with the number of High NA layers expected to rise as AI transistor architectures get more complex. The companies also launched an industry initiative to move High NA photomasks from today's 6-inch format to 12-inch, targeting a pilot line by 2031 and production-ready systems by 2033. CNBC reported that Samsung separately plans to use High NA for DRAM from 2028, joining Intel, which is already patterning some high-volume layers with the tools.
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